In the fast-evolving semiconductor industry, precision in chemical concentration measurement is critical to ensuring process stability, yield optimization, and cost efficiency.
KxS Technologies’ in-situ refractive index measurement technology balances cost, speed and accuracy in providing real-time monitoring to maintain chemical integrity, reduce waste, and enhance process control throughout the fab distribution chain.
Our sensors are used in blender systems achieving the correct concentration of constituents in SC-1 and SC-2 cleaning solutions being essential for effective particle removal and surface preparation.
Along with an increasingly complex chemical supply chain new ways in generating chemicals onsite are advocated. Blenders generating bulk 29% NH₃(aq) from ammonia gas and water adopt the DCM-10 refractometer for ensuring the formation of ammonia liquid to its bulk concentration. Refractive index is uniquely a good match in the entire ammonia concentration range 0-30%wt.
Anisotropic wet etching of silicon with 50% potassium hydroxide (KOH) demands precise control to achieve smooth, accurate etching profiles, particularly in MEMS and deep etch applications.
Titanium etching requires balanced acid blends of sulfuric acid (H₂SO₄), nitric acid (HNO₃), and phosphoric acid (H₃PO₄) to ensure efficient material removal while minimizing defects and over-etching. Our technology provides continuous monitoring for optimized concentration levels.
The selective etching of polycrystalline silicon on wafer back sides requires precise HF:HNO₃ concentration control to maintain process uniformity.
Chemical mechanical planarization (CMP) introduces contaminants that must be effectively removed using post-CMP cleaning solutions. Our sensors optimize cleaning bath life and ensure proper chemical balance for consistent wafer surface quality.
Our team of experts can help tailor the right monitoring solution for your specific semiconductor application.